มอสเฟต

Mosfet 23N50E

รายละเอียด มอสเฟต 23N50E

Feature 

• Maintains both low power loss and low noise

• Lower RDS(on) characteristic

• More controllable switching dv/dt by gate resistance

• Smaller VGS ringing waveform during switching

• Narrow band of the gate threshold voltage (3.0±0.5V)

• High avalanche durability

Applications

• Switching regulators

• UPS (Uninterruptible Power Supply)

• DC-DC converters

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)