มอสเฟต

Mosfet K3878 TOSHIBA 

รายละเอียด

 
Features

• Low drain-source ON resistance : RDS (NO) = 1.0 Ω (typ.)

• High forward transfer admittance : |Yfs| = 7.0 s (typ.)

• Low leakage current : IDSS = 100 µA (max) (VDS = 720V)

• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10, ID = 1 mA)